CHMS Professor Yayoi Takamura and collaborators havepublished ground-breaking work in a recent issue of Physics Review Letters that investigates exchange interactions in complex oxide micromagnets using x-ray photoemission electron microscopy. Exchange interactions occur at the interfaces between ferromagnetic and antiferromagnetic materials. The structural and magnetic properties of the antiferromagnetic layer dictates the nature of the exchange interactions, which can be in the form of exchange bias or spin-flop coupling. Using a carefully designed model system consisting of complex oxide materials, La0.7Sr0.3MnO3 and LaFeO3, the researchers demonstrated that both types of exchange interactions could exist simultaneously in patterned micromagnets. These results highlight the importance of exchange interactions for domain engineering of future spintronic devices, with applications for magnetic memory or computer logic devices.